Admittance locus diagram simulations by stratification

Stratification and transfer matrix methods were used to simulate admittance locus diagrams of optical thin films such as bi-layer antireflection film, three-layer antireflection film and periodic multilayer with high reflection. Characteristics of admittance locus diagrams were analyzed and compared. End point of admittance diagram of an anti-reflective film was found to be close to points in real axis, with a value equal to admittance of incident medium. End point of periodic multilayer was close to zero point or infinite points on real axis.